We discuss properties of Bi4Ti3O12 (BTO) films in BTO/CeO2/YSZ multilayered buffer system, on silicon and on silicon-on-insulator (SOI) substrates, employed for the preparation of epitaxial La0.67Sr0.33MnO3 (LSMO) films. We try to find a correlation between the parameters of film preparation and structural properties and morphology of the BTO films with the goal to eliminate defects. We also point out that many morphological defects observed on the final LSMO films prepared for bolometers originate in the bottom BTO layer. We have found out that the actual substrate temperature is a very important parameter during the process of BTO film deposition since deviations of only few degrees from the proper temperature can cause the growth of mixture crystal orientation.