High resolution X-ray diffraction is commonly used for the analysis of single crystalline epitaxial layers exhibiting high degree of crystal perfection. The method enables to resolve fine variations of the measured intensities and therefore is very efficient in the investigation of the structural parameters of single or multilayered epitaxial systems. In this article the method combining the standard HR technique with grazing incidence set-up is outlined. It is shown that in non-coplanar geometry the intensity distribution within the section of reciprocal space perpendicular to the sample surface, standardly scanned in coplanar geometry, can be measured at constant angle of incidence alpha. For asymmetric diffractions that are not accessible in coplanar geometry the value of a can be decreased to extremely low values close to zero making the method depth-sensitive. The effect of non-coplanar geometry on the angular resolution is analyzed and the possible application of phi scans in asymmetric non-coplanar geometry is discussed. The proposed scans are illustrated by measurements on selected GaN based epitaxial layers and they can be applied also to other types of epitaxial systems with medium crystal quality.