Modifications induced by ultrashort laser pulses have been investigated in crystalline Ge2Sb2Te5 thin films. The observations comprise optical and structural changes, amorphization, and ablation. By combining optical microscopy and cross-sectional scanning- and transmission electron microscopy, it is found that the threshold for permanent change of the optical properties of Ge2Sb2Te5 - responsible for the reduced optical reflectivity - is slightly lower than that for amorphization; no further change in reflectivity is seen upon amorphization. The laser-fluence thresholds for amorphization and change of the optical properties both show a strong dependence on film thickness that can be explained thermally by two-temperature simulations. In the case of sufficiently thick films, two distinct low- and high-fluence ablation thresholds are found. The mechanisms of the ablation thresholds are discussed, and it is concluded that ablation in the low-fluence regime proceeds by photomechanical spallation.