Herein, we utilize a facile hydrothermal process for the synthesis of Bi2S3 films on the SnO2: F films (FTO) substrate. The structure, surface morphology and thickness of the samples were characterized by variously analysis method. The Bi2S3 films-based laser detectors exhibit excellent linear photocurrent characteristics, good sensitivity to 450 nm, 650 nm and 850 nm laser beam. Prolonging the reaction time was beneficial for the photoelectric performance of the Bi2S3 films-based laser detectors. The photoelectric conversion properties can be improved by optimizing the thickness of the films. The experimental results of this work can provide an additional opportunity for fabricating excellent photoconductive performance laser detectors.