The temperature dependences of electrical characteristics (conductivity sigma, the Hall constant R-H, and carrier mobility mu) were studied in n-Cd1-xMnxTe:In (x = 0.05; 0.1) crystals grown by the Bridgman method. Reproducibility of electrical characteristics was achieved by thermal treatment at 420 K for 1 h. The R-H(T) dependence was characterized by the exponential high- and low-temperature regions with different activation energies. The activation energy in the high-temperature region of R-H(T) corresponds to the ionization energy epsilon(D) of the donors controlling n-type conductivity. The activation energy epsilon(1) in the low-temperature region of RH(T) is related to epsilon(D) by the relation epsilon(1) = epsilon(D) - gamma epsilon(b), where gamma-factor is close to 1 and epsilon(b), is activation energy, which determined the temperature dependence of carrier mobility in the low-temperature region. The presence of this region is due to micro-inhomogeneities, which are formed during post-growth cooling of the crystal.