Potential-induced degradation (PID) of photovoltaic (PV) modules is one of the most severe types of degradation, where power losses on system level may even exceed 30%. The PID process depends on the strength of the electric field, the temperature, the relative humidity, conductive soiling, time and the PV module materials. For p-type cells, it has been established that the decrease of the shunt resistance, due to migration of sodium ions across the nip junction is the root cause of the degradation. On the other hand, it has recently been confirmed for n-type cells that the PID occurs due to an increase in recombination as charges are driven to the anti-reflection (AR) coating/emitter interface. In this paper, we present the comparison between PID of p-type and n-type crystalline silicon (c-Si) solar cells and their progression of PID. The time evolution of PID is studied by light and dark I-V curve measurements, electroluminescence images and progressions of the one- and two-diode equivalent model parameters, viz. photocurrent, 1st and 2nd diode reverse saturation currents, 1st and 2nd diode ideality factors, shunt resistance and series resistance. (C) 2018 Elsevier Ltd. All rights reserved.