A new bind of all-organic heterojunction consisting of polythiophene and its derivatives was prepared by the electrochemical method in the presence of boron trifluoride diethyl ether as supporting electrolyte on indium-tin oxide glass electrode. It was observed that sequential-different oxidation potential among layers of polythiophenes is a prerequisite for the heterojunction to show rectification effect. The carrier-flow of the three semiconductors for PBrT/PT/PMT heterojunction was discussed in detail. Its rectification ratio, barrier height, and ideality factor were 392 (+/-2 V), 0.89 eV, and 8.1, respectively.