We report here the synthesis of nanosized (50-55 nm) Fe-doped calcium copper titanate CaCu2.5Ti3.5FeO12 quadruple perovskite semiconductor by a two-step synthetic protocol involving citrate combustion for precursor synthesis followed by its calcination at different temperatures for the synthesis of the target materials. Materials were applied in thin film metal-semiconductor (MS) junction based Schottky Barrier Diodes (SBDs). The nonlinear current-voltage characteristics indicate successful application of the materials in optoelectronic device. The device performance of the fabricated SBDs are analyzed by employing the thermionic emission (TE) theory and the space charge limited current (SCLC) theory followed by a schematic band structure.