In this study, the deposition of Cu2SnS3 (CTS) thin films was carried out at different sulfurization temperatures in the range of 350-550 degrees C under high vacuum of 1 Pa using the sputtered Cu/Sn/Cu metal precursor layers in the sulfur vapor atmosphere. In order to reduce the Sn loss, a particular metal stack of Cu/Sn/Cu was used. Single phase monoclinic (M)-CTS thin film was obtained at 500 degrees C. The high intensity Raman modes at 292 cm(-1) and 350 cm(-1) further confirmed the formation of M-CTS. The M-CTS thin film sulfurized at 500 degrees C showed a composition of Cu/Sn = 1.89 and an optical band gap energy of 0.94 eV. Hall effect measurement of the film sulfurized at 500 degrees C with Cu/Sn ratio of 1.82 showed an electrical resistivity of 7.30 Omega-cm, carrier concentration of 6.29 x 10(17) cm(-3), and mobility of 1.36 cm(2) /Vs. Our results indicate that the copper-poor composition with a stacking order of Cu/Sn/Cu is favored in order to attain the single phase M-CTS.