TiO2 thin films were coated on p-Si (100) substrate by sol gel dip coating method by varying the withdrawal speed from 1 cm/min to 4 cm/min. Post-deposition annealing of all the samples were carried out at 500 degrees C in air ambient. Uniform surface morphology has been observed for all the samples. The intensity of XRD peak corresponding to the anatase phase of TiO2 was found to be increased with the rise in withdrawal speed. The formation of titania was also confirmed by the FTIR study. Capacitance-voltage and current-voltage measurements were carried out by fabricating Al/TiO2/Si metal oxide semiconductor (MOS) structure. Oxide charge density (Q(ox)) was calculated from the shift in flatband voltage and was found to be decreased with the increase in withdrawal speed. Interface trap density (D-it) was estimated to be 2.1 x 10(-12) eV(-1) cm(-2) for withdrawal speed of 1 cm/min. The film deposited at the withdrawal speed of 1 cm/min has shown better bipolar resistive switching behavior with an enhanced resistive window in both the polarities. (C) 2018 Published by Elsevier B. V.