The frequency dependence of real (epsilon') and imaginary (epsilon ''.) components of the complex dielectric permittivity has been determined for tin-thiohypodiphosphate Sn2P2S6 films in the temperature region from 150 to 400 K. There are two dielectric relaxation regions in the frequency range between 10(-1) and 10(7) Hz. The high-frequency dielectric dispersion region at 10(3)-10(7) Hz exhibits Debye type behaviour due to a semiconductor- metal interface barrier similar to a Schottky barrier. At low frequencies from 10(-1) to 10(3) Hz, dielectric response is nearly a "flat loss" at least in the low-temperature region. At elevated temperature, the flat dispersion region disappears and a strong linear decrease of epsilon '' (omega) is observed because of the dc conductivity.