Deposition and subsequent decomposition of the organometallic precursor title diethyldithiocarbamate Zn[S2CN(C2H5)(2)](2) has been shown to produce ZnS films. On Si(111), these firms have been seen to grow epitaxially using X-ray photoelectron diffraction (XPD) as a probe. For film thickness from similar to 5 to 2000 Angstrom angle-dependent XPD scans, recorded for Zn 2p(3/2) intensity as a function of polar angle theta, resulted in a consistent forward scattering peak at theta = 0 degrees which indicated that the films have preferred orientation. Detailed analysis of the relative photoelectron intensities (Zn 2p(3/2) and S 2p) indicated that the films are of cubic structure and [111] oriented. This was despite the total carbon concentration in the bulk remaining at similar to 3 atomic %. This study demonstrates that the relatively simple and low-energy single-source chemical vapor deposition growth technique can be utilized for the production of epitaxial II-VI semiconductor thin films.