This paper aims to clarify the effect of carbon concentration on carrier lifetime in as-grown n-type and non-doped silicon crystals produced via the Czochralski (CZ) method. We grew n-type and non-doped silicon single crystals with 3-in. diameters along with different carbon and phosphorous contents. The resistivity, concentrations of oxygen and carbon, and lifetime were measured using four-point measurements, Fourier-transform infrared spectroscopy, and the eddy current method, respectively. The oxygen concentrations of the crystals were 6-8 x 10(17) atoms/cm(3), and the bulk lifetimes ranged from 10 to 20 ms. The carrier lifetime of CZ silicon crystals depended on dopant concentration but had no significant dependence on carbon concentration. (C) 2018 Elsevier B.V. All rights reserved.