Heat Treatment of Carbonized Photoresist Mask with Ammonia for Epitaxial Lateral Overgrowth of a-plane GaN on R-plane Sapphire

Dae-sik Kim; Jun-hyuck Kwon; Junggeun Jhin; Dongjin Byun

Korean Journal of Materials Research, Vol.28, No.4, 208-213, April, 2018

DOI10.3740/MRSK.2018.28.4.208 Export Citation

Heat Treatment of Carbonized Photoresist Mask with Ammonia for Epitaxial Lateral Overgrowth of a-plane GaN on R-plane Sapphire

Dae-sik Kim, Jun-hyuck Kwon, Junggeun Jhin¹, and Dongjin Byun^†

Department of Materials Science & Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
¹LED Procurement Team, LG Innotek, 570 Hyuam-ro, Munsan-eup, Paju-si, Gyeonggi-do 10842, Republic of Korea

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Epitaxial (1120) a-plane GaN films were grown on a (1102) R-plane sapphire substrate with photoresist (PR) masks using metal organic chemical vapor deposition (MOCVD). The PR mask with striped patterns was prepared using an ex-situ lithography process, whereas carbonization and heat treatment of the PR mask were carried out using an in-situ MOCVD. The heat treatment of the PR mask was continuously conducted in ambient H2/NH3 mixture gas at 1140 °C after carbonization by the pyrolysis in ambient H2 at 1100 °C. As the time of the heat treatment progressed, the striped patterns of the carbonized PR mask shrank. The heat treatment of the carbonized PR mask facilitated epitaxial lateral overgrowth (ELO) of a-plane GaN films without carbon contamination on the R-plane sapphire substrate. Thhe surface morphology of a-plane GaN films was investigated by scanning electron microscopy and atomic force microscopy. The structural characteristics of a-plane GaN films on an R-plane sapphire substrate were evaluated by ω-2θ high-resolution X-ray diffraction. The a-plane GaN films were characterized by X-ray photoelectron spectroscopy (XPS) to determine carbon contamination from carbonized PR masks in the GaN film bulk. After Ar+ ion etching, XPS spectra indicated that carbon contamination exists only in the surface region. Finally, the heat treatment of carbonized PR masks was used to grow high-quality a-plane GaN films without carbon contamination. This approach showed the promising potential of the ELO process by using a PR mask.

Keywords:heat treatment;photoresist mask;gallium nitride thin film;epitaxial lateral overgrowth;metal organic chemical vapor deposition

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[1] Nakamura S, Senoh M, Mukai T, Jpn. J. Appl. Phys., 30, L1708 (1991)

[2] Khan MA, Bhattarai A, Kuznia JN, Oison DT, Appl. Phys. Lett., 63, 1214 (1993)

[3] Morkoc H, Strite S, Gao GB, Lin ME, Sverdlov B, Burns M, J. Appl. Phys., 76, 1363 (1994)

[4] Im JS, Kollmer H, Off J, Sohmer A, Scholz F, Hangleiter A, Phys. Rev. B, 57, R9435 (1998)

[5] Langer R, Simon J, Ortiz V, Pelekanos NT, Barski A, Andre R, Godlewski M, Appl. Phys. Lett., 74, 3827 (1999)

[6] Lefebvre P, Morel A, Gallart M, Taliercio T, Allegre J, Gil B, Mathieu H, Damilano B, Grandjean N, Massies J, Appl. Phys. Lett., 78, 1252 (2001)

[7] Takeuchi T, Wetzel C, Yamaguchi S, Sakai H, Amano H, Akasaki I, Kaneko Y, Nakagawa S, Yamaoka Y, Yamada N, Appl. Phys. Lett., 73, 1691 (1998)

[8] Bernardini F, Fiorentini V, Phys. Rev. B, 57, R9427 (1998)

[9] Cingolani R, Botchkarev A, Tang H, Morkoc H, Traetta G, Coli G, Lomascolo M, Carlo AD, Sala FD, Lugli P, Phys. Rev. B, 61, 2711 (2000)

[10] Waltereit P, Brandt O, Trampert A, Grahn HT, Menniger J, Ramsteiner M, Reiche M, Ploog KH, Nature, 406, 865 (2000)

[11] Sun YJ, Brandt O, Cronenberg S, Dhar S, Grahn HT, Ploog KH, Waltereit P, Speck JS, Phys. Rev. B, 67, 041306 (2003)

[12] Craven MD, Lim SH, Wu F, Speck JS, Denbaars SP, Appl. Phys. Lett., 81, 469 (2002)

[13] Jang S, Lee D, Kwon JH, Kim SI, Yim SY, Lee J, Park JH, Byun D, Jpn. J. Appl. Phys., 52, 115501 (2012)

[14] Roder C, Einfeldt S, Figge S, Paskova T, Hommel D, Paskov PP, Monemar B, Behn U, Haskell BA, Fini PT, Nakamura S, J. Appl. Phys., 100, 103511 (2006)

[15] Kang BH, Lee JE, Kim DS, Bae S, Jung S, Park J, Jhin J, Byun D, J. Nanosci. Nanotechnol., 16, 11563 (2016)

[16] Lee CM, Kang BH, Kim DS, Byun D, Korean J. Mater. Res., 24(12), 645 (2014)

[17] Kim SI, Kim B, Jang S, Kim AY, Park J, Byun D, J. Cryst. Growth, 326(1), 200 (2011)

[18] Kim DS, Jeong WS, Ko H, Lee JS, Byun D, Thin Solid Films, 641, 2 (2017)

[19] Kim DS, Lee CM, Jeong WS, Cho SH, Jhin J, Byun D, J. Nanosci. Nanotechnol., 16, 11575 (2016)

[20] Chiu CH, Yen HH, Chao CL, Li ZY, Yu P, Kuo HC, Lu TC, Wang SC, Lau KM, Cheng SJ, Appl. Phys. Lett., 93, 081108 (2008)

[21] Smart JA, Chumbes EM, Schremer AT, Shealy JR, Appl. Phys. Lett., 75, 3820 (1999)

[22] Strittmatter A, Rodt S, Reißmann L, Bimberg D, Schroder H, Obermeier E, Riemann T, Christen J, Krost A, Appl. Phys. Lett., 78, 727 (2001)

[23] Vodenitcharova T, Zhang LC, Zarudi I, Yin Y, Domyo H, Ho T, Sato M, J. Mater. Process. Tech., 194, 52 (2007)

[24] Guzman G, Herrera M, Silva R, Vasquez GC, Maestre D, Semicond. Sci. Technol., 31, 055006 (2016)

[25] Sherwood TK, Maak RO, Ind. Eng. Chem. Fundam., 1, 111 (1962)

[26] Dijen FK, Pluijmakers J, J. Eur. Ceram. Soc., 5, 385 (1989)

[27] Lars GC, Felix S, Frank AP, Vivien P, Jesper K, Thomas B, Jens NK, Angew. Chem.-Int. Edit., 50, 4601 (2011)

[28] Cacace F, Wolf AP, J. Am. Chem. Soc., 87, 5301 (1965)

[29] Philip SB, Daniel MW, Paul M, J. Am. Chem. Soc., 105, 488 (1983)

[30] Uchida K, Watanabe A, Yano F, Kouguchi M, Tanaka T, Minagawa S, J. Appl. Phys., 79, 3487 (1996)

[31] Thakur V, Shivaprasad SM, Appl. Surf. Sci., 327, 389 (2015)