We report low temperature (100-170 degrees C) and rapid (10 min) formation of crystalline Ge films between Au catalyst film and quartz glass substrate using a radio frequencymagnetron sputtering deposition. The formation rate of crystalline Ge films between Au catalyst film and quartz glass substrate is proportional to the deposition rate of Ge film, namely the flux of Ge atoms. To obtain insights on the formation mechanism of crystalline Ge films, we studied dependence of grain size of Au films on annealing temperature and Au film thickness. CrystallineGe films formed belowAu films have randomcrystalline orientationwith in-plane grain size frombelow1 mu m. Small crystalline grain size of Au films is needed to form rapidly Au induced crystalline Ge films. (C) 2017 Elsevier B.V. All rights reserved.