In this paper, the authors reported recent work on the growth and fabrication of InGaAs/GaAsSb type II superlattice detectors by solid source molecular beam epitaxy. Superlattice materials with different Beryllium (Be) doping concentration were grown and characterized by high resolution X-ray diffraction, Hall Effect technique, and photoluminescence. The results showed that doping concentration of the superlattice was sensitive to the Be temperature. A p-pi-n InGaAs/GaAsSb T2SL photodiode was grown on an InP substrate. The full width at half maximum of the first order satellite peak from X-ray diffraction was 36 arcsec. The photodiode with 7 nm InGaAs and 5 nm GaAsSb in each period showed a 50% cutoff wavelength of 2.35 mu m at 293 K. The dark current density at -50 mV bias was 0.54 mA/cm(2) and the resistance-area product at zero bias (R(0)A) was 46 Omega.cm(2). The peak detectivity was 4.4 X 10(10) cm Hz(1/2)/W. The quantum efficiency at 2.1 mu m was measured to be 48.2%. (C) 2017 Published by Elsevier B.V.