In this paper, first-principle calculations based on density functional theory are carried out to explore the interface properties of the blue phosphorene/graphene-like GaN van der Waals heterostructures. The edge positions for valence and conduction band of blue phosphorene and graphene-like GaN nanosheets change with the Fermi energy level and form the type-II heterostructure. The internal electric field facilitates the separation of electron-hole pairs and restrained the carrier recombination in the blue phosphorene/graphene-like GaN interfaces. (C) 2017 Elsevier B.V. All rights reserved.