Journal of Physical Chemistry A, Vol.104, No.8, 1648-1655, 2000
Reactions of laser-ablated Ga, In, and Tl atoms with nitrogen atoms and molecules. Infrared spectra and density functional calculations of GaN, NGaN, NInN, and the M3N and MN3 molecules
Laser-ablated gallium atoms react with nitrogen atoms and molecules to give GaN, NGaN, Ga3N, and GaN3, which are identified from nitrogen and gallium isotopic shifts, mixed isotopic splittings, and density functional theory calculations. A 484.9 cm(-1) band is assigned to the GaN molecule perturbed by the nitrogen matrix, sharp 586.4 and 584.1 cm(-1) bands to the antisymmetric vibration of the linear (NGaN)-Ga-69 and (NGaN)-Ga-71 molecules, 666.2 and 656.0 cm(-1) bands to the planar Ga3N molecule, and 2096.9 and 1328.3 cm(-1) bands to antisymmetric and symmetric N-N-N vibrations of the GaNNN azide molecule. This work provides the first experimental evidence for GaxNy molecules that may be involved in semiconductor film growth. Laser-ablated In and Tl atom reactions produce analogous molecules.