Study of DC sputtered Ti/Pt thin film layers on SiO2/n-Si substrate with the emphasis on post deposition heat treatment is presented. Microstructural and morphological properties of Ti/Pt thin films annealed in the range 300-700 degrees C in air are investigated and correlated with measured electrical properties. AES depth profile and composition of the sample annealed at 400 degrees C and 700 degrees C showed significant diffusion of Ti throughout the Pt layer toward surface, accompanied with enhanced oxygen incorporation, while keeping rather constant TiOx composition throughout the structure. AFM and SEM analyses of Ti/Pt film morphology showed that Pt grain size was almost temperature independent up to 400 degrees C, while above 500 degrees C, grain growth was enhanced. XPS analyses confirmed that most of Ti incorporated in the film was in oxide state (Ti4+) after annealing at 700 degrees C. EBSD analyses confirmed strong (111) texture of Pt polycrystalline grains annealed above 500 degrees C. Resistance of meandered Ti/Pt resistors was found to decrease significantly above 500 degrees C and complies well with the microstructural rearrangements determined by AFM and AES analyses. It was further determined that by increasing the annealing temperature from 300 degrees C to 700 degrees C, a monotonic increase of temperature coefficient of resistance from 1400 ppm/degrees C to 2400 ppm/degrees C, respectively, was obtained. This represents a considerable, improvement in sensitivity of Ti/Pt layers used as a temperature sensing devices. Resistance exhibited linear temperature dependency with nonlinearity better than 0.84%. (C) 2017 Elsevier B.V. All rights reserved.