In this work we present a solar cell structure where the concept of intermediate band is exploited by, a high energy barrier AIGaAs material with embedded InAs-based quantum dots via a multistep growth approach. In this way the intrinsic issues related to different surface kinetics of involved species (Ga, In and Al adatorns) and affecting crystal quality are successfully overcome. With respect to energy band engineering of the cell, this growth approach introduces a two-dimensional quaternary layer and consequently an additional energy band, between the host junction and the dot energy levels. This band results strongly related to the quantum dot states by thermal transferring and inter-level filling processes. Moreover, low temperature (up to 100 K) photocurrent generation via additional infrared absorption is promoted by the employed band engineering, thus representing an effective method to extend intermediate band solar cell design flexibility.