The optical properties of an epitaxial indium phosphide (InP) film deposited on an Fe compensated InP (InP:Fe) wafer have been measured at room temperature by ex-situ spectroscopic ellipsometry over a spectral range of 0.038-8.5 eV. The complex dielectric function spectra, epsilon(E) = epsilon(1) (E) + i epsilon(2) (E), have been determined by fitting a parametric model to the experimental ellipsometric data. Kramers-Kronig consistent parameterizations have been applied to describe interband transitions and defect-based sub-bandgap absorption in the 0.73-8.5 eV spectral range, and both phonon modes and free carrier properties in the 0.038-0.73 eV range. Spectra in epsilon from 0.73-8.5 eV shows ten higher energy interband critical point transitions at 1.36, 1.42, 3.14, 3.34, 4.71, 4.97, 5.88, 6.45, 7.88, and 8.22 eV. The direct band gap energy of 1.37 eV and Urbach energy 46 meV are also determined from spectra in epsilon. A strong optical phonon mode is identified near 305 cm(-1). Electronic transport properties, carrier concentration (N) and mobility (mu), calculated from Drude model with N = 1.9 x 10(18) cm(-3) and mu = 1559 cm(2)/Vs agree well with direct electrical Hall effect measurement values of N = 2.2 x 10(18) cm(-3) and mu = 1590 cm(2)/Vs. A parameterization of epsilon from 0.038 to 8.5 eV for the epitaxial InP film is reported. (C) 2017 Elsevier B.V. All rights reserved.