Bulk copper antimony selenide was synthesized using mechanical alloying from the elemental precursors. Phase formation in milled powders was studied using x-ray diffraction (XRD) and Raman spectroscopy studies. The synthesized bulk source after cold compaction was used as source material for thin film deposition by e-beam evaporation. Thin film deposition was carried out at various e-beam current values (I-b similar to 30, 40 and 50 mA) and at a substrate temperature of 200 degrees C. Near stoichiometric CuSbSe2 thin films were obtained for I-b values closer to 50 mA and post annealing at a temperature of 380 degrees C for 1 h. Thin films deposited using above conditions were found to exhibit an absorption coefficient (a) values of >10(5) cm(-1) and a band gap value similar to 1.18 eV that is closer to the reported band gap for CuSbSe2 compound. 2017 Elsevier B.V. All rights reserved.