The measured emission wavelengths of AlInAs/GaInAs/InP quantum cascade lasers (QCLs) grown by metal organic vapor phase epitaxy (MOVPE) have been reported to be similar to 0.5-1 mu m longer than the designed QCL wavelength. This work clarifies the origin of the red-shifted wavelength. It was found that AlInAs/GaInAs heterointerfaces are compositionally graded over similar to 2.5-4.5 nm, and indium accumulates at the AlInAs-toGainAs interface. Thus, the as-grown QCLs are far from the ideal abrupt interfaces used in QCL modeling. When graded layers are incorporated in QCL band structure and wavefunction calculations, the emission wavelengths are red shifted. Furthermore, we demonstrate that QCLs with graded interfaces can be designed without compromising performance and show greatly improved correlation between designed and measured emission wavelength. QCLs were designed for emission between 7.5 and 8.5 mu m. These structures were grown and wet-etched ridge devices were fabricated. The QCLs exhibit room temperature peak powers exceeding 900 mW and pulsed efficiencies of similar to 8 to 10%.