Regulation of electronic structure and mobility cut-on rate in two-dimensional transition metal dichalcogenides (TMDs) has attracted much attention because of its potential in electronic device design. The anisotropic Raman scattering and mobility cut-on rate of monolayer unique distorted-1T (1T(d)) ReS2 with external strain are determined theoretically based on the density function theory. The angle-dependent Raman spectrum of A(g)-like, E-g-like and C-p models are used to discriminate and analysis structural anisotropy; the strain is exploited to adjust the structural symmetry and electronic structure of ReS2 so as to enhance mobility cut-on rate to almost 6 times of the original value. Our results suggest the use of the strain engineering in high-quality semiconductor switch device. (C) 2017 Elsevier B.V. All rights reserved.