화학공학소재연구정보센터
Journal of Crystal Growth, Vol.455, 172-180, 2016
Structural analysis of the 3C vertical bar 4H boundaries formed on prismatic planes in 4H-SiC epitaxial films
The boundaries between 3C and 4H-SiC domains on the prismatic planes of hexagonal lattices formed in a 4H-SiC epitaxial film were investigated using both transmission and scanning transmission electron microscopy. These observations determined that the boundaries have a periodic structure, in which each unit cell consists of 12 basal planes of the hexagonal lattice. Six Shockley partial dislocations are situated in each unit cell of the boundary structure. Burgers vectors and core structures of these partial dislocations are discussed.