A hysteresis loop of current voltage characteristics based multiferroic BiFeO3 nanoribbons memory device is observed. Moreover, the white-light can greatly regulate both the current voltage hysteresis loop and the ferroelectric hysteresis loop. The stored space charges within the electrodes/BiFeO3 interface can lead to hysteresis-type I-V characteristics of Ag/BiFeO3/FTO devices. The white-light controlled I-V loop and ferroelectric loop result from photon-generated carries. Since the I-V hysteresis loop and ferroelectric hysteresis loop have a potential application prospect to the memory devices, these two white-light controlled the hysteresis loops curves are likely to provide promising opportunity for developing the multi-functional memory devices. (C) 2016 Elsevier B.V. All rights reserved.