Thin Solid Films, Vol.616, 760-766, 2016
Potentiostatic deposition of Cu2O films as p-type transparent conductors at room temperature
Single phase Cu2O films have been prepared via an electrodeposition technique onto ITO glass substrates at room temperature. Likewise, Cu2O films were deposited using a potentiostatic process from an alkaline electrolyte containing copper (II) nitrate and 1 M sodium citrate. Single phase Cu2O films were electrodeposited at a cathodic deposition potential of -500 mV for a reaction period of 90 min, and pH of 12 to yield a film thickness of 0.49 mu m. The mechanism for nucleation of Cu2O films was found to vary with deposition potential. Applying the Scharifi