In this paper, we present a detailed investigation of the impact of hydrogen anneal on the low frequency noise spectra of n- and p-MOS devices from an advanced CMOS technology node. We investigate the impact of hydrogen anneal in three different wafers, one with one time hydrogen anneal step (1 x H2), one with two times (2 x H2) and one without hydrogen anneal (w/o H2). The results demonstrate that the carrier number with correlated mobility fluctuations model can explain accurately the 1/f noise results. A significant reduction of the 1/f noise level was observed for the device treated with two times hydrogen anneal. (C) 2016 Elsevier Ltd. All rights reserved.