A novel method of improving RF performance for AlGaN/GaN HEMT by introducing a cavity structure under the gate-head of the T-shaped gate is proposed, which can effectively reduce the parasitic gate capacitance. The device with cavity structure presents quite similar DC characteristics with the conventional device without cavity, including a maximum drain current density of 1.16 A/mm, a peak transconductance of 424 mS/mm and a slightly degraded two-terminal breakdown voltage of 29 V. However, in comparison with the device without cavity, the device with cavity presents the significant improvements in small signal characteristics, with the f(T) increasing from 60 GHz to 84 GHz and the f(max) increasing from 93 GHz to 104 GHz. (C) 2016 Elsevier Ltd. All rights reserved.