The BaAl2S4 layers, which were identified to be a cubic structure in space group Pa3, were grown using the hot wall epitaxy method attached with the reservoir tail. Also, the coincidence lattice mismatch of the grown layers was shown to be -2.52% due to the influence of the compressive strain. The Hall effect measurement showed the different temperature-dependent decrease of mobility at a temperature above 100 K. One was T-1/2 at the temperature range of 100 < T< 180 K and the other was T-3/2 at the temperature of T > 180 K. The mobility decreased in proportion to T-1 at a low temperature range of T < 100 K. Three PC peaks obtained from the photocurrent (PC) spectra were corresponding to band-to-band transitions, which were observed over the temperature range. These PC peaks were caused by the transition of electrons from the three valence band states in order of increasing energy to the conduction band states, respectively. By analyzing absorption and PC results, the band gap variation has been compared and matched well with E-g(T)=E-g(0)-7.556 x 10(-4)T(2)/(T+523), where E-g(0) is estimated to be 4.0596, 4.1053, and 4.1094 eV. (C) 2016 Elsevier B.V. All rights reserved.