Electromigration has become a critical issue for reliability in Sn-based conducting materials that are used in advanced microelectronic packages with micro-joint integration. In this study, a Blech structure was used to characterize the Sn electromigration behavior of various strip lengths (L-0=10-100 mu m). We established a mathematical model based on the fundamental electromigration theory to describe the correlation between the residual strip length (L) and the current stressing time (t). A three-stage mechanism was proposed to rationalize the Sn electromigration in the Blech structure. A good agreement between the mathematical model and experimental data was obtained, advancing our understanding of Sn electromigration. (C) 2015 Elsevier B.V. All rights reserved.