Lead-free perovskite infrared light-emitting diodes are achieved by using a halide perovskite CsSnI3 as an emissive layer. The film shows compact micro meter-sized grains with only a few pinholes and cracks at the grain boundaries. The device exhibits maximum radiance of 40 W sr(-1) m(-2) at a current density of 364.3 mA cm(-2) and maximum external quantum efficiency of 3.8% at 4.5 V.