Flexible GaN Light-Emitting Diodes Using GaN Microdisks Epitaxial Laterally Overgrown on Graphene Dots

Chung K; Yoo H; Hyun JK; Oh H; Tchoe Y; Lee K; Baek H; Kim M; Yi GC

Advanced Materials, Vol.28, No.35, 7688-7688, 2016

DOI10.1002/adma.201601894 Export Citation

Flexible GaN Light-Emitting Diodes Using GaN Microdisks Epitaxial Laterally Overgrown on Graphene Dots

Chung K, Yoo H, Hyun JK, Oh H, Tchoe Y, Lee K, Baek H, Kim M, Yi GC

The epitaxial lateral overgrowth (ELOG) of GaN microdisks on graphene microdots and the fabrication of flexible light-emitting diodes (LEDs) using these microdisks is reported. An ELOG technique with only patterned graphene microdots is used, without any growth mask. The discrete micro-LED arrays are transferred onto Cu foil by a simple liftoff technique, which works reliably under various bending conditions.