Comparison of Electrical Properties between Sputter Deposited Au and Cu Schottky Contacts to n-type Ge

Hogyoung Kim; Min Kyung Kim; Yeon Jin Kim

Korean Journal of Materials Research, Vol.26, No.10, 556-560, October, 2016

DOI10.3740/MRSK.2016.26.10.556 Export Citation

Comparison of Electrical Properties between Sputter Deposited Au and Cu Schottky Contacts to n-type Ge

Hogyoung Kim^†, Min Kyung Kim¹, and Yeon Jin Kim¹

Department of Visual Optics, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea
¹Department of Electronic and IT Media Engineering, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea

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Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, the electrical properties of Au and Cu Schottky contacts to n-Ge were comparatively investigated. Lower values of barrier height, ideality factor and series resistance were obtained for the Au contact as compared to the Cu contact. The values of capacitance showed strong dependence on the bias voltage and the frequency. The presence of an inversion layer at the interface might reduce the intercept voltage at the voltage axis, lowering the barrier height for C-V measurements, especially at lower frequencies. In addition, a higher interface state density was observed for the Au contact. The generation of sputter deposition-induced defects might occur more severely for the Au contact; these defects affected both the I-V and C-V characteristics.

Keywords:barrier height;series resistance;interface state

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[3] Kuzum D, Martens K, Krishnamohan T, Saraswat K, Appl. Phys. Lett., 95, 252101 (2009)

[4] Nishimura T, Kita K, Toriumi A, Appl. Phys. Lett., 91, 123123 (2007)

[5] Zhou Y, Ogawa M, Bao M, Han W, Kawakami R, Wang K, Appl. Phys. Lett., 94, 242104 (2009)

[6] Nishimura T, Kita K, Toriumi A, Appl. Phys. Exp., 1, 051406 (2008)

[7] Tsui B, Kao M, Appl. Phys. Lett., 103, 032104 (2013)

[8] Auret F, Meyer W, Coelho S, Hayes M, Appl. Phys. Lett., 88, 242110 (2006)

[9] Simoen E, Opsomer K, Claeys C, Maex K, Detavernier C, Van Meirhaeghe RL, Clauws P, J. Electrochem. Soc., 154(10), H857 (2007)

[10] Coelho S, Auret F, Rensburg P, Nel J, J. Appl. Phys., 114, 173708 (2013)

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[15] Cheung S, Cheung N, Appl. Phys. Lett., 49, 85 (1986)

[16] Witczak S, Suehle J, Gaitan M, Solid-State Electron., 35, 345 (1992)

[17] Chattopadhyay P, Raychaudhuri B, Solid-State Electron., 36, 605 (1993)

[18] Green M, Shewchun J, Solid-State Electron., 16, 1141 (1973)

[19] Monch W, J. Vac. Sci. Technol. B, 17(4), 1867 (1999)

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[21] Yao H, Chi D, Li R, Lee S, Kwong D, Appl. Phys. Lett., 89, 242117 (2006)

[22] Auret F, Coelho S, Meyer W, Nyamhere C, Hayes M, Nel J, J. Electron. Mater., 36, 1604 (2007)

[23] Chattopadhyay S, Bera K, Ray K, Bose K, Dentel D, Kubler L, J. Macromol. Sci.-Mater. Electron., 9, 403 (1998)

[24] Mamor M, J. Phys. Condens. Matter, 21, 335802 (2009)

[25] Sun S, Sun Y, Liu Z, Lee D, Peterson S, Pianetta P, Appl. Phys. Lett., 88, 021903 (2006)

[26] Li XF, Li AD, Liu XJ, Gong Y, Chen XC, Li H, Wu D, Appl. Surf. Sci., 257(10), 4589 (2011)

[27] Xue B, Chang H, Sun B, Wang S, Liu H, Chin. Phys. Lett., 29, 046801 (2012)