Chemical Physics Letters, Vol.658, 76-79, 2016
The low-lying electronic states of SiO
The singlet states of SiO that correlate with ground state atoms have been studied. The computed spectroscopic constants are in good agreement with experiment. The lifetime of the E state has been calculated to be 10.9 ns; this is larger than the results of previous computations and is in excellent agreement with the experimental value of 10.5 +/- 1.1 ns. The lifetime of the A state is about three times larger than found in experiment. We suggest that absorption from the X state to the (2)(1)Pi state is responsible for the unidentified lines in the experiment of Hormes et al. Published by Elsevier B.V.
Keywords:Electronic transition