An approach to achieve Si or SiGe film exfoliation with as low as 3 x 10(16)/cm(2) H implantation dose was investigated. Two intrinsic Si0.75Ge0.25/Si samples, merged with B-doped Si0.75Ge0.25 layer and B doped Si0.75Ge0.25/Si superlattice (SL) layer respectively, were used to study the formation of crack after 3 x 10(16)/cm(2) H implantation and annealing. For the sample into which B doped Si0.75Ge0.25 layer is incorporated, only few discrete cracks are observed along both sides of the B doped Si0.75Ge0.25 layer; on the contrary, a continuous (100) oriented crack is formed in the B -doped Si0.75Ge0.25/Si SL layer, which means ion cut can be achieved using this material with 3 x 10(16)/cm(2) H implantation. As the SIMS profiles confirm that hydrogen tends to be trapped at B -doped SiGe/Si interface, the formation of continuous crack in SL layer can be ascribed to the more efficient hydrogen trapping by the multiple B-doped SiGe/Si interfaces. (C) 2016 Elsevier B.V. All rights reserved.