Thickness Dependence of the Quantum Anomalous Hall Effect in Magnetic Topological Insulator Films

Feng X; Feng Y; Wang J; Ou YB; Hao ZQ; Liu C; Zhang ZC; Zhang LG; Lin CJ; Liao J; Li YQ; Wang LL; Ji SH; Chen X; Ma XC; Zhang SC; Wang YY; He K; Xue QK

Advanced Materials, Vol.28, No.30, 6386-6386, 2016

DOI10.1002/adma.201600919 Export Citation

Thickness Dependence of the Quantum Anomalous Hall Effect in Magnetic Topological Insulator Films

Feng X, Feng Y, Wang J, Ou YB, Hao ZQ, Liu C, Zhang ZC, Zhang LG, Lin CJ, Liao J, Li YQ, Wang LL, Ji SH, Chen X, Ma XC, Zhang SC, Wang YY, He K, Xue QK

The evolution of the quantum anomalous Hall effect with the thickness of Cr-doped (Bi,Sb)(2)Te-3 magnetic topological insulator films is studied, revealing how the effect is caused by the interplay of the surface states, band-bending, and ferromagnetic exchange energy. Homogeneity in ferromagnetism is found to be the key to high-temperature quantum anomalous Hall material.