Contact Area-Dependent Electron Transport in Au/n-type Ge Schottky Junction

Hogyoung Kim; Da Hye Lee; Hye Seon Myung

Korean Journal of Materials Research, Vol.26, No.8, 412-416, August, 2016

DOI10.3740/MRSK.2016.26.8.412 Export Citation

Contact Area-Dependent Electron Transport in Au/n-type Ge Schottky Junction

Hogyoung Kim^{1, 2, †}, Da Hye Lee^{1, 3}, and Hye Seon Myung^{1, 3}

¹Department of Visual Optics, Seoul National University of Science and Technology (Seoultech), Seoul 01811, Republic of Korea
²Convergence Institute of Biomedical Engineering & Biomaterials, Seoul National University of Science and Technology (Seoultech), Seoul 01811, Republic of Korea
³, Korea

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The electrical properties of Au/n-type Ge Schottky contacts with different contact areas were investigated using current-voltage (I-V) measurements. Analyses of the reverse bias current characteristics showed that the Poole-Frenkel effect became strong with decreasing contact area. The contribution of the perimeter current density to the total current density was found to increase with increasing reverse bias voltage. Fitting of the forward bias I-V characteristics by considering various transport models revealed that the tunneling current is dominant in the low forward bias region. The contributions of both the thermionic emission (TE) and the generation-recombination (GR) currents to the total current were similar regardless of the contact area, indicating that these currents mainly flow through the bulk region. In contrast, the contribution of the tunneling current to the total current increased with decreasing contact area. The largest E00 value (related to tunneling probability) for the smallest contact area was associated with higher tunneling effect.

Keywords:n-type Ge;contact areas;perimeter current;tunneling current

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[2] Bahagwat V, Xiao Y, Bhat I, Dutta R, Refaat T, Abedin M, Kumar V, J. Electron. Mater., 35, 1613 (2006)

[3] Garcia-Belmonte G, Montero JM, Ayyad-Limonge Y, Barea EM, Bisquert J, Bolink HJ, Curr. Appl. Phys., 9(2), 414 (2009)

[4] Willis A, Solid-State Electron., 33, 531 (1990)

[5] Dimoulas A, Tsipas P, Sotiropoulos A, Evangelou E, Appl. Phys. Lett., 89, 252110 (2006)

[6] Nishimura T, Kita K, Toriumi A, Appl. Phys. Lett., 91, 123123 (2007)

[7] Zhou Y, Ogawa M, Han X, Wang K, Appl. Phys. Lett., 93, 202105 (2008)

[8] Thathachary A, Bhat K, Bhat N, Hegde M, Appl. Phys. Lett., 96, 152108 (2010)

[9] Wu J, Wu Y, Hou C, Wu M, Lin C, Chen L, Appl. Phys. Lett., 99, 253504 (2011)

[10] Kishore V, Paramahans P, Sadana S, Ganguly U, Lodha S, Appl. Phys. Lett., 100, 142107 (2007)

[11] Suzuki A, Asaba S, Yokoi J, Kato K, Kurosawa M, Sakashita M, Taoka N, Nakatsuka O, Zaima S, Jpn. J. Appl. Phys., 53, 04EA06 (2014)

[12] Sioomns J, J. Phys. D-Appl. Phys., 4, 613 (1971)

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[14] Carpenter M, Melloch M, Lundstrom M, Tobin S, Appl. Phys. Lett., 52, 2157 (1988)

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[16] Suzue K, Mohammad S, Fan Z, Kim W, Aktas O, Botchkarev A, Morkoc H, J. Appl. Phys., 80, 4467 (1996)

[17] Kim H, Jung CY, Kim SH, Cho Y, Kim DW, Curr. Appl. Phys., 16(1), 37 (2016)

[18] Yu A, Solid-State Electron., 13, 239 (1970)