This short communication shows a model established for simulating oxygen distribution in silicon ingot cast by cold crucible continuous casting (4C). The solution indicates that the oxygen distribution along the ingot growth direction is mainly affected by its segregation and its concentration tends to be constant with the casting proceeds. Comparing the solution with the measurement results, the oxygen segregation coefficient is proved to be slightly less than one during 4C. (C) 2016 Elsevier Ltd. All rights reserved.