We demonstrate the growth of epitaxial (100)-oriented, rutile Sb-doped SnO2 (ATO) and (111)-oriented, cubic Sn-doped In2O3 (ITO) transparent conducting oxide (TCO) contacts on top of an InGaN/GaN(0001) light emitting diode (LED) by plasma-assistedmolecular beam epitaxy (PAMBE). Both oxides formrotational domains. The inplane epitaxial alignment of the two ITO(111) rotational domains to the GaN(0001) was: GaN [21-10]parallel to- ITODomain1[-211]parallel to ITODomain2[-1-12]. A growth temperature as low as 600 degrees C was necessary to realize a low contact resistance between ATO and the top p-GaN layer of the LED but resulted in non-optimal resistivity (3.4x 10(-3)Omega cm) of the ATO. The current-voltage characteristics of a processed LED, however, were comparable to that of a reference LED with a standard electron-beam evaporated ITO top contact. At short wavelengths, the optical absorption of ATO was lower than that of ITO, which is beneficial even for blue LEDs. Higher PAMBE growth temperatures resulted in lower resistive ATO but higher contact resistance to the GaN, likely by the formation of an insulating Ga2O3 interface layer. The ITO contact grown by PAMBE at 600 degrees C showed extremely low resistivity (10(-4)Omega cm) and high crystalline and morphological quality. These proof-of-principle results may lead to the development of epitaxial TCO contacts with low resistivity, well-defined interfaces to the p-GaN to help minimize contact losses, and enable further epitaxy on top of the TCO. (C) 2015 Elsevier B.V. All rights reserved.