유기금속 화학증착법에 의해 Sputtered-Ru/Polysilicon 위에 증착된 Pt 전극의 특성

최은석; 양정환; 윤순길; Eun-Suck Choi; Jung-Hwan Yang; Soon-Gil Yoon

Korean Journal of Materials Research, Vol.9, No.4, 368-372, April, 1999

Export Citation

유기금속 화학증착법에 의해 Sputtered-Ru/Polysilicon 위에 증착된 Pt 전극의 특성

Characterization of Pt Bottom Electrode Deposited on Sputtered-Ru/polysilicon by Metalorganic Chemical Vapor Deposition

최은석, 양정환, 윤순길

충남대학교 재료공학과

Eun-Suck Choi, Jung-Hwan Yang, and Soon-Gil Yoon

Department of Materials Engineering, Chungnam National University, Daeduk Science Town, Taejon 305-764, Korea

초록

제안된 MOCVD-Pt/sputtered-Ru/polysilicon 전극구조에서 열처리 온도가 증가함에 따라 접착력은 우수하였으며 약 600℃까지는 안정된 전극구조를 형성하였다. 그러나 700℃ 이상에서는 장벽층 Ru가 Pt층으로 확산하여 산소 분위기에서 산화되어 RuO2 형성으로 인해 하부전극의 거칠기를 증가시켰다. 이틀은 Pt의 비저항을 증가시키는 원인으로 작용한다. 600℃ 에서 열처리한 시편의 비저향은 약 13 μQㆍ cm을 갖는다. 형성된 전극구조는 반도체 메모리 소자를 위한 강 유전체박막 집적에 적용가능하다.

The suggested electrode structure of MOCVD-Pt/sputtered-Ru/polysilicon has an excellent adhesion with increasing annealing temperatures and shows a stable electrode structure up to 600℃. However, the ruthenium used for barrier layer increased the roughness of platinum bottom electrodes because ruthenium diffused through the Pt bottom electrode and reacted with oxygen during the annealing above 700℃. The surface roughness increased the resistivity of Pt bottom electrodes. The resistivity of samples annealed at 600℃ was about 13 μQㆍcm. The electrode structure was possible to apply for ferroelectric thin film integration of semiconductor memory devices.

[References]

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[1] Yoon SG, Lee JC, Safari A, J. Appl. Phys., 76, 2999 (1994)

[2] Yoon SG, Safari A, Thin Solid Films, 254(1-2), 211 (1995)

[3] Lee WJ, Yoon SG, Kim HG, J. Appl. Phys., 80, 5891 (1996)

[4] Vijay DP, Desu SB, J. Electrochem. Soc., 140, 2640 (1993)

[5] Lee EG, Wouters DJ, Willems G, Maes HE, Integrated Ferroelectrics, 16, 165 (1997)

[6] Chung CW, Lee JK, Kim CJ, Chung IS, Integrated Ferroelectrics, 16, 139 (1997)

[7] Seong NJ, Lee SS, Yoon SG, Appl. Phys. Lett., 71, 81 (1997)

[8] Seong NJ, Yang CH, Shin WC, Yoon SG, Appl. Phys. Lett., 72, 1374 (1998)

[9] Amanuma K, Kunio T, Integrated Ferroelectrics, 16, 175 (1997)

[10] Yamamichi S, Lesaicherre PY, Yamaguchi H, Takemura K, Sone S, Yabuta H, Sato K, Tamura T, Nakajima K, Ohnishi S, Tokashiki K, Hayashi Y, Kato Y, Miyasaka Y, Yoshida M, Ono H, IEEE IEDM-95 (1995) p.119.

[11] Yuuki A, Yamamuka M, Makita T, Horikawa T, Shibano T, Hirano N, Maeda H, Mikami N, Ono K, Ogata H, Abe H, IEEE IEDM-95 (1995) p.115.

[12] Lesaioerre PY, Yamaguchi H, Miyasaka Y, Watanabe H, Ono H, Yoshida M, Integrated Ferroelectrics, 8, 201 (1995)

[13] Choi ES, Yoon SG, Choi WY, Kim HG, Appl. Surf. Sci., 141, 77 (1999)