규불화수소산을 이용한 설리콘 산화물 필름 제조에 관한 연구

박은희; 정흥호; 임헌성; 홍성수; 노재성; Eun-Hee Park; Hung-Ho Chung; Heon-Sung Lim; Seong-Su Hong; Jae-Seong Rho

Korean Journal of Materials Research, Vol.9, No.4, 414-418, April, 1999

Export Citation

규불화수소산을 이용한 설리콘 산화물 필름 제조에 관한 연구

Preparation of Silicon Oxide Thin Film using Hydrofluorosilicic Acid

박은희, 정흥호, 임헌성¹, 홍성수², 노재성

충남대학교 공과대학 공업화학과
¹한국화학연구소 분석부
²호서대학교 공과대학 화학공학부

Eun-Hee Park, Hung-Ho Chung, Heon-Sung Lim¹, Seong-Su Hong², and Jae-Seong Rho

Dept. of Fine Chemical Engineering and Chemistry, College of Eng., Chungnam National Univ., Taejon 305-764, Korea
¹Analytical Division, Korea Research Institute Of Chemical Technology, Taejon 305- 600, Korea
²Dept. of Chemical Engineering, College of Eng., Hoseo Univ., Chungnam 336-795, Korea

초록

전형적인 금속산화물 형태의 필름은 광학적, 전기척 성질을 가지고 있어 많은 연구 분야에서 무기기능성 물질로서 널리 이용되고 있다. 현재 공정온도가 낮은 액상 증착법 (LPD) 은 다른 기술들과 달리 진공상태가 불필요하다는 정과 낮은 비용, 높은 생산성, 낮은 공정온도(< 50℃) 등의 장점으로 많이 연구되고 있다. Silica 분말을 40wt% 규불화수소산에 첨가시켜 silica로 포화된 규불화수소산 용액을 생성시키고, 붕산용액을 연속적으로 첨가하여 과포화된 규불화수소산 용액을 제조하였다. 이렇게 형성된 과포화 용액에 기질물질인 slide gIass를 침지시켜 silicon oxide 필름을 형성시켰다. LPD silicon oxide 필름은 붕산용액의 농도와 첨가된 H2O양에 의해 두께가 두꺼워짐을 알 수 있었고, Raman Spectroscopy로 silicon 이 담금 용액내에서 SiF6 2- 형태로 존재하는 것을 알 수 있었다.

TypicaI metaI oxide thin fiIms havI11g opticaI and electrical properties are widely used as inorganic functional materials. Liquid phase deposition(LPD) method, a new Jow temperature process, has been developed for the several advantages of no vacuum system, low cost, high throughput, and low processing temperature(< 50℃). Silica powder was added to 40 wt% hydrofluoro-silicic acid(H2SiF6) to obtain an immersing solution of silica-saturated hydrofluorosilicic acid solution. Boric acid solution was continuously added in the range from 0 to O.05M to prepare supersaturated hydrofluorosilicic acid soIution. LPD SiO2 film was formed with the variation of added amount of H2O. The SiO2 thin fiIm could be prepared from hydrofluorosilicic acid by LPD method. The thickness of LPD SiO2 film was influenced by the boric acid concentration and added amount of H2O. Silicon in thin fiIm existed as SiF6 2- by Raman spectrum.

Keywords:Liquid phase deposition(LPD) method;Silicon oxide(SiO2) film;Hydrofluorosilicic acid(H2SiF6);Boric acid (H3BO3)

[References]

Nagayama H, Honda H, Kawahara H, J. Electrochem. Soc., 135(8), 2013 (1988)
Chou JS, Lee SC, Appl. Phys. Lett., 64(15), 1971 (1994)
Homma T, Katoh T, Yammada Y, Murao Y, J. Electrochem. Soc., 140(8), 2410 (1993)
Chou JS, Lee SC, J. Electrochem. Soc., 141(11), 3214 (1994)
Ino J, NEW GLASS, 7(4), 283 (1992)
Yeh CF, Chen CL, Lin GH, J. Electrochem. Soc., 141(11), 3177 (1994)
Fan TH, Lin SS, Yah CF, 1995 International Conference on Solid State Devices and Materials, 596 (1995).
Yeh CF, Lin SS, Yang TZ, Chen CL, Yang YC, IEEE Trans. Electron Devices, 41(2), 173 (1993)
Yeh CF, Chen CL, J. Electrochem. Soc., 142(10), 3579 (1995)
Awazu K, Kawazoe H, Seki K, J. Non-Cryst. Solids, 151, 102 (1992)

[1] Nagayama H, Honda H, Kawahara H, J. Electrochem. Soc., 135(8), 2013 (1988)

[2] Chou JS, Lee SC, Appl. Phys. Lett., 64(15), 1971 (1994)

[3] Homma T, Katoh T, Yammada Y, Murao Y, J. Electrochem. Soc., 140(8), 2410 (1993)

[4] Chou JS, Lee SC, J. Electrochem. Soc., 141(11), 3214 (1994)

[5] Ino J, NEW GLASS, 7(4), 283 (1992)

[6] Yeh CF, Chen CL, Lin GH, J. Electrochem. Soc., 141(11), 3177 (1994)

[7] Fan TH, Lin SS, Yah CF, 1995 International Conference on Solid State Devices and Materials, 596 (1995).

[8] Yeh CF, Lin SS, Yang TZ, Chen CL, Yang YC, IEEE Trans. Electron Devices, 41(2), 173 (1993)

[9] Yeh CF, Chen CL, J. Electrochem. Soc., 142(10), 3579 (1995)

[10] Awazu K, Kawazoe H, Seki K, J. Non-Cryst. Solids, 151, 102 (1992)