MBE로 성장시킨 In 0.1 Ga 0.9 As에피층의 Photoreflectance 특성 연구

이동율; 유재인; 손정식; 김기홍; 이동건; 이정열; 배인호; 손영호; 황도원; Dong-Yul Lee; Jae-In Yu; Jeong-Sik Son; Ki-Hong Kim; Dong-Kun Lee; Jung-Yeul Lee; In-Ho Bae; Yeong-Ho Son; Do-Weon Hwang

Korean Journal of Materials Research, Vol.9, No.5, 515-519, May, 1999

Export Citation

MBE로 성장시킨 In 0.1 Ga 0.9 As에피층의 Photoreflectance 특성 연구

The Characteristics Study of Photoreflectance of In 0.1 Ga 0.9 As Epi-layer Grown by Molecular Beam Epitaxy

이동율, 유재인, 손정식, 김기홍, 이동건, 이정열, 배인호, 손영호¹, 황도원¹

영남대학교 물리학과
¹브이엠티(주) 기술개발실

Dong-Yul Lee, Jae-In Yu, Jeong-Sik Son, Ki-Hong Kim, Dong-Kun Lee, Jung-Yeul Lee, In-Ho Bae, Yeong-Ho Son¹, and Do-Weon Hwang¹

Department of Physics, Yeungnam University, Kyongsan Kyongbuk 712-749, Korea
¹R&D team, VMT Co., Ltd, Pohang, Kyung-Buk 790- 330, Korea

초록

분자선 에피탁시법으로 성장시킨 In 0.1 Ga 0.9 As/GaAs 이종접합 구조의 photoreflectance 특성에 대해 연구하였다. 상온 측정 결과 In 0.1 Ga 0.9 As E0 띠 간격 에너지는 약 1.3 eV 에서 관측되었다. 이로부터 In조성비를 계산하였다. 그리고, In 0.1 Ga 0.9 As E0 띠 간격 에너지 이상에서 에깨 신호률 관측하였는데, 도핑 농도가 증가함에 따라 어깨 신호는 12 meV 에서 70 meV 고 에너지 이상으로 이동하였다. 이러한 어깨 신호는 In 의 표면 갈라놓기와 표연 재증발 현상때문에 생긴 것으로 생각된다. 어깨 신호의 고에너지로의 이동은 에피층의 성장 직후 In의 재증발에 기인된 것으로 여겨진다.

We have investigated the photoref1ectan∞ characteristics for In 0.1 Ga 0.9 As/GaAs heterojunction structure grown by moleαllar beam epitaxy (MBE). The Eo bandgap energy of Ino ,Ga 0.9 As at room temperature was observed at about 1.3 eV. From this result, the indium composition x value was calculated. The shoulder peaks were observed higher than E0. peaks, and peak positions were shifted toward 12 me V to 70 me V higher energy with increasing doping concentrations. The shoulder peaks can be obseπed by In segregation and re-evaporation. However, we think that indium re-evaporation cause the shift of shoulder peaks after epi1ayer growth.

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[3] Brugger H, Mussig H, Wolk C, Appl. Phys. Lett., 59(21), 2739 (1991)

[4] Bosacchi A, Colonna F, Franchi S, Pascarella P, Allegri P, J. Cryst. Growth, 150, 185 (1995)

[5] Wang DP, Chen CT, J. Appl. Phys., 78(3), 2117 (1995)

[6] Aspnes DE, Phys. Rev. B, 10, 4228 (1974)

[7] Pan SH, Shen H, Hang Z, Pollak FH, Phys. Rev. B, 38, 3375 (1988)

[8] Peters L, Phaneuf L, Kapitan LW, Theis WM, J. Appl. Phys., 62, 4558 (1987)

[9] Badakhshan A, Glosser R, Alavi K, Appl. Phys. Lett., 59, 1218 (1991)

[10] Lautenschlager P, Garriga M, Logothetidis S, Cardona M, Phys. Rev. B, 35, 9174 (1987)

[11] Hunang YS, Qiang H, Pollak FH, J. Appl. Phys., 70(12), 7537 (1991)

[12] Badakhshan A, Durbin C, Glosser R, Alavi K, Pathak R, J. Vac. Sci. Technol. B, 11, 167 (1991)

[13] Evangelisti F, Frova A, Fischbach JU, Phys. Rev. Lett., 9, 1519 (1974)

[14] Berry AK, Gaskill DK, Stauf GT, Bottka N, Appl. Phys. Lett., 58(24), 2824 (1991)

[15] Joyce MJ, Gal M, Tann J, J. Appl. Phys., 65(3), 1377 (1989)