Low energy irradiation of GaSb surfaces has been shown to lead to nanopillar formation. Being performed ex-situ, controlling the parameters of the ion beam for controlled nanopattern formation is challenging. While mainly utilized for imaging and cutting purposes, the development of multibeam (helium/neon) ion microscopes has opened the path towards the use of these microscopes for in-situ ion irradiation and nanopatterning studies. In this study, in-situ irradiation (neon ions)/imaging (helium ions) of GaSb surfaces is performed using Carl Zeiss-neon ion microscope at low energies (5 and 10 key). Imaging with helium ions, nanodots were shown to form at particular fluences after which are smoothed. Ex-situ imaging with SEM showed nanopore formation of size controlled by the ion energy and fluence. Compared to lower energy ex-situ neon ion irradiation at similar fluxes, where nanopillars are formed, the results demonstrated a transition in the nanostructure type and formation mechanism as the energy is changed from 2 to 5 keV. Simulations show an increase in the ballistic diffusion and a decrease in the strength of phase separation as a function of ion energy in agreement with the suppression of nanopillar formation at higher energies. Collision cascade simulations suggest a transition toward bulk-driven mechanisms. (C) 2016 Elsevier B.V. All rights reserved.