Metal Oxide Semiconductor capacitors are investigated, employing ALD grown Y2O3 as gate dielectric, and n-type (100) germanium as channel substrate. The effect of post deposition annealing (PDA) in oxygen and forming gas atmosphere using a thin catalytically acting platinum (Pt)-layer on the Y2O3/Ge interface is electrically analyzed for buffered hydrofluoric (BHF) and thermally pre-treated Ge-surfaces. The Pt-assisted PDA ensures even for BHF pre-treated samples very low values for the interface trap density D-it of 1.55 x 10(11) eV(-1) cm(-2) and low leakage current densities J of <7 x 10(-9) A/cm(2) outperforming conventional PDA treatments. The interfacial formation of GeO2 and yttrium germanate after PDA is proven by using X-ray Photoelectron Spectroscopy measurements. (C) 2016 Elsevier B.V. All rights reserved.