A novel low-temperature sintering microwave dielectric based on forsterite (Mg2SiO4) ceramics was synthesized through the solid-state reaction method. The effects of LiF additions on the sinterability, phase composition, microstructure, and microwave dielectric properties of Mg2SiO4 were investigated. It demonstrated that LiF could significantly broaden the processing window (similar to 300 degrees C) for Mg2SiO4, and more importantly the sintering temperature could be lowered below 900 degrees C, maintaining excellent microwave dielectric properties simultaneously. The 2 wt% LiF-doped samples could be well-sintered at 800 degrees C and possessed a epsilon(r) similar to 6.81, a high Qxf similar to 167 000 GHz, and a (f) similar to -47.9 ppm/degrees C, having a very good potential for LTCC integration applications.