The authors introduce an in situ characterization method of resists used for electron-beam lithography. The technique is based on the application of an atomic force microscope, which is directly mounted below the cathode of an electron-beam lithography system. They demonstrate that patterns irradiated by the electron beam can be efficiently visualized and analyzed in surface topography directly after the electron-beam exposure. This in situ analysis takes place without any development or baking steps and gives access to the chemical (or latent) image of the irradiated resist. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3457938]