Previous Article Next Article Table of Contents Journal of Materials Science Letters, Vol.19, No.6, 529-531, 2000 DOI10.1023/A:1006766006826 Export Citation An investigation on the epitaxial growth of GaN film on Si(111) substrate Zhang HX, Ye ZZ, Zhao BH Keywords:SINGLE CRYSTALLINE GAN;INTERMEDIATE LAYER Please enable JavaScript to view the comments powered by Disqus.
