The effect of growth temperature on the phase evolution and morphology change of tin sulfide thin films by electron-beam evaporation was investigated. Orthorhombic tin monosulfide (SnS) was dominant at low growth temperature of 25 degrees C, whereas a sulfur-rich phase of Sn2S3 coalesced as the growth temperature increased over 200 degrees C. Thin film growth ceased at 280 degrees C due to re-evaporation of the tin sulfide. The dependence of growth temperature on the phase evolution of tin sulfide was confirmed by X-ray diffraction, scanning electron microscopy, and UV-Vis spectrophotometry. The lowest electrical resistivity of similar to 51 Omega cm, with a majority hole concentration of similar to 10(17) cm(-3), was obtained for the film grown at 100 degrees C, and the resistivity drastically increased with increasing growth temperature. This behavior was correlated with the emergence of resistive sulfur-rich Sn2S3 phase at high temperatures. (C) 2015 Elsevier B.V. All rights reserved.