Previous Article Next Article Table of Contents Advanced Materials, Vol.27, No.16, 2614-2620, 2015 DOI10.1002/adma.201500040 Export Citation Graphene/Si-Quantum-Dot Heterojunction Diodes Showing High Photosensitivity Compatible with Quantum Confinement Effect Shin DH, Kim S, Kim JM, Jang CW, Kim JH, Lee KW, Kim J, Oh SD, Lee DH, Kang SS, Kim CO, Choi SH, Kim KJ Keywords:graphene;Si quantum dots;photodetectors;quantum confinement effect;heterojunction diodes Please enable JavaScript to view the comments powered by Disqus.
